eMemory Announces the First Verified NeoFuse OTP IP in 16nm FinFET Plus Process
Hsinchu, Taiwan (Sept. 15, 2015) – eMemory announces its new technology breakthrough–the availability of its One-Time Programmable (OTP) NeoFuse technology in mainstream 16nm FinFET Plus process, as well as the development and verification of high-capacity (256k bit) and low-voltage (<0.8V) silicon IPs. It is the world’s first OTP technology verified in 16nm FinFET Plus process. eMemory also proves that its NeoFuse technology can follow Moore’s Law, scaling down beyond 16nm.
eMemory’s NeoFuse technology features “Short Time One-Pulse” data programming, unlike conventional anti-fuse OTP technologies require multiple-pulses programming that disturbs the accuracy of programmed data and requires longer programming and verification time, therefore result in higher coding cost and reliability issues.
eMemory’s 16nm NeoFuse IP works at single ultra-low voltage. Operating at ultra-low voltage enables the handshaking of signals before system is activated, which enhances data protection and security for mobile payment and IoT-related applications. NeoFuse IP is able to run on a single low voltage instead of dual voltages, thereby significantly alleviates design complexity of customer’s SoC products.
eMemory has completed high-capacity and low-voltage NeoFuse OTP IP verification in 16nm FinFET Plus process. It will be officially unveiled at the TSMC 2015 Open Innovation Platform (OIP) Ecosystem Forum in Santa Clara, California, on September 17, 2015. This exciting innovation, which has led eMemory to the forefront of the industry, also marks an important milestone as the world leader in logic non-volatile memory technology.
