MRAM

eMemory’s MRAM is offering up to 32M bits with the endurance 1M cycles at -40℃ to 125℃.

eMemory’s MRAM IP delivers an effective embedded EEPROM/Flash up to 32M bits in 22nm technology and can spread to 40nm/55nm processes. With its compact cell size and only three additional masks, MRAM benefits its users with lower manufacturing costs and shorter process cycle times. A MRAM cell has faster data programming and access timing in comparison to embedded EEPROM/Flash. This advantage makes it an ideal EEPROM/Flash solution for consumer electronics, robotics, mobile and AIoT applications. Furthermore, MRAM is coherent with the IP user’s crucial analog circuits because the MRAM module can be easily integrated with analog circuits without affecting the user’s analog performance.

High Endurance

>1M cycles

High Operation Temperature

Up to 125℃/10 Years, Tj 150℃

Fast Access

15ns for read

3 BEoL Masks Adders

Low manufacture cost and shorter process cycle time

Process Compatible

BEoL MRAM process won’t affect SPICE model

Technical Principles

The MRAM memory cell comprises a magnetic storage element and a MOSFET selector. By changing the write current direction flowing through it, the elements are formed two ferromagnetic plates as a non-volatile memory.

The magnetic storage element was controlled to the CMOS process with only three mask adders. Compared to the embedded Flash process, the embedded MRAM processes are much simpler, with lower manufacturing costs and shorter process cycle times. MRAM further benefits its users with fast time-to-market by removing the need for the silicon-verification cycle of IP users' crucial analog circuits. Unlike embedded Flashed, MRAM cells are located between two back-end metal layers. Thus, it will not cause SPICE parameter shifts in MOSFETs and other devices.

One key competence of embedded MRAM is its excellent power efficiency. A MRAM cell can be programmed at less than 1.8V within and below 1uS. Other key competencies include fast access time and endurance of up to 1M cycle and an operation temperature range from -40℃ to 125℃. Those advantages make embedded MRAM a high-potential solution for consumer electronics, robotics, AIoT and mobile applications.

Use Cases & Functionality

MRAM can be applied in various product fields, such as code storage in high-end MUCs, AIoTs, smart PMIC and Artificial intelligence. The core function of this MRAM technology is to replace embedded Flash memory solution, especially in the technology nodes below 22nm.